Estimate the small-signal channel resistance

Reference no: EM132990294

Question 1: Using estimate the small-signal channel resistance (the change in the drain current with changes in the drain-source voltage) of a MOSFET operating in the triode region (the resistance. between the drain and source).

ID = β.[(V_GS - V_THIN) V_DS - V²_DS/2]

Question 2: Show that the bottom MOSFET. in a series connection of two MOSFETs cannot operate in the saturation region. Neglect the body effect. Hint: Show that Mi is always either in cutoff (V_GS1 < V_THN) or triode ( V_DS1 < V_GS1 - V_THN),

Question 3: On a CV plot, like the one seen in. Fig. explain in your own words and with cross-sectional views why operation in the strong inversion region results in a better NIOSCAP than operation in the accumulation region. If you wanted to use the MOSFET as a cap in accumulation what would you do in Your layout to make it a better cap?

Question 4: Sketch, for an NMOS device, I_D against V_DS with V_GS = V_DD. Indicate, on your sketch, I_on, I_D,sat, and V_DS.sat

Question 5: How does the subthreshold slope change with temperature? Is it desirable to have large or small subthreshold slope (units of mV/dec)?

Reference no: EM132990294

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