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Draw the truth table of a full subtractor circuit. Write a minterm Boolean expression for DIFFERENCE and BORROW outputs in terms of minuend variable, subtrahend variable and BORROW-IN. Minimize the expressions and implement them in hardware.
Signal generator‘s internal impedance is purely resistive andhas an open-circuit voltage of 3.5 V. When the generator is loaded with 22 ohms of resistance, its terminalvoltage drops to 2.8 V. What is the generator's output impedance (pure resistanc..
Consider a GaAs MESFET. When the device is biased in the saturation region, we find that Id = 18.5µa and Vgs=.35 V and Id=86.2µa at Vgs=.5V. Determine the conduction parameter k and the threshold voltage Vtn.
Find the estimator g(Y) of X, in terms of F, that minimizes the mean square error MSB: = E[(X - g{Y))2],
A police K-band radar is operating, with transmit power of 1000 Watts and antenna gain of 300 in linear units. The radar unit is designed to detect a target with a radar cross-section (RCS) of 6 sq. meters and its receiver can detect a signal
The plant contains six 288MW generators. Given the overall facility efficiency is 76%, and the plant is capable of full output for a duration of 5 hours, determine the potential energy of upper reservoir and the minimum amount of water in gallons ..
A circuit has a Thevenin equivalent circuit consisting of a voltage source of 10 V and an output resistance of 20 O. A non-ideal voltmeter is used to measure the source voltage. What will be the measured voltage if the voltmeter has an input resis..
If a device is modeled as a current source, what can you say about the load resistance?
Two ideal p-n junction diodes are connected in series across a 1 V battery such that both of them are forward biased (draw this). One diode has I0 = 10-5 A and another I0 = 10-8 A.
Determine the complex power for the following cases: (a) P = 269 W, Q = 150 VAR (capacitive) (b) Q = 2000 VAR, pf = 0.9 (leading) (c) S = 600 VA, Q = 450 VAR (inductive) (d) Vrms = 220 V, P = 1 kW, and |Z| = 40 ohm (inductive)
A semiconductor device requires n-type material; it is to be operated at 400K. a) would Si doped with 10^15 atoms/cm^3 of Arsenic be useful in this applications. b) Could Ge doped with 10^15 cm^-3 antimony be used.
Create the Walsh code matrix for a W16. (c) For IS-95, on the forward link, list the Walsh code assigned to the various logical channels (hint: there are 64 Walsh codes)
Consider an open-ended cylindrical tube (infinitesimally thin walls) of radius a and total length 2h. A total charge Q is uniformly distributed over the surface of the tube. Find an expression for the electric field anywhere on the axis of the tub..
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