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Draw the logic circuit that realizes the finite state machine using D-type flip-flops and NAND gates ,Please just use flip flops and NAND gates
Write a Matlab program to calculate the electric field due to a line of charge of length 1m. a) Describe the line of charge as a collection of point charges centered on the z-axis. Calculate the electric scalar potential of that same line of charge.
a) Find the two values of vGS that give there spective limiting values of resistance b) Estimate the maximum permissible amplitude ofvDS for this resistor to operate as a linear device
The IC differential amplifier is to be fabricated in a CMOS technology having the technology specifications of Kn' = 200 uA/V. Kp' = 100 uA/V. Vtn = 1V Vtp = -1V Va = 50V L = 1u. Calculate all the device widths for a constant bias current of 1mA
A balanced, 3-phase, 3-wire, 60Hz, wye-connected source isserving a combination of balanced loads in various configurations.Measurement of the source line voltage indicates 480 voltsline-to-line. Measurement of the source line current indicates 23..
Executes a JSR instruction
Water moves through a constricted pipe in steady, ideal flow. At the lower point the pressure is 1.69 105 Pa and the pipe radius is 2.80 cm. At another point 2.50 m higher, the pressure is 1.35 105 Pa and the pipe radius is 1.60 cm.
1. An optical fiber has a core refractive index n1=1.5 and a cladding refractive index n2=1.48. If the core diameter of the fiber is 50 microns, please calculate (a) The numerical aperture of the fiber.
Explain with examples what linear time-invariant (LTI) system is. Consider the fourth order optimal FIR filter
Write and test a program for the EASy68k to input a string from the keyboard, convert all letters to uppercase and echo (output) the new string to the screen. Use a subroutine to perform the lower-to-upper case conversion.
design a stable optical cavity using one mirror with infinite radius of curvature and 95% reflectivity. We want the cavity to 1 m long. Assume the second mirror is 100% reflective. a. Design the cavity such that g1g2 product is 0.5
contrast the electron and hole drift velocities through a 10-µm layer of intrinsic silicon across which a voltage of 5 V is imposed. Let µn = 1350 cm²/V·s and µp = 480 cm²/V·s.
1. Simulate the following circuit on PSpice showing the capacitor current and capacitor voltage during the transient phase. Use the following component values in the circuit: L = 1 mH, C = 1.57 µF. In your simulation calculate the resistor values ..
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