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Consider an n-type Si sample with doping concentration Nd = 2x10^17 cm^-3.
(Eg = 1.1 eV, kT = 0.026 eV and ni = 1.3x10^10 cm^-3 at 300K)
(a) Where is the Fermi level (Ef) relative to intrinsic level (Ei) at 300K?
(b) Calculate the Fermi level position relative to conduction band (Ec-Ef) and relative to valence band (Ef-Ev).
(c) Draw a band diagram showing all of the energy level positions calculated.
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For the depletion-load amplifier, let W1=80microm, L1=4micrometers, W2=8 micrometers and L2=32 micrometers. If the body-effect parameter X=0.2, find the voltage gain neglecting the effect on ro.
Give three advantages of a three-phase system over a single-phase system There are two basic three-phase connections, the wye connection and the delta connection. Draw a labelled diagram showing the wye connection
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Consider a coffee counter with a single server at which tired students arrive according to a Poisson process. Let the mean arrival rate be two students per ten minutes and assume the serving time is exponentially distributed with an average of 180..
At what temperature are the two carrier densities equal?
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Explain why the short-circuit method for determining the Thevenin resistance of a circuit cannot be applied if the circuit does not contain any independent current or voltage sources.
What is the fundamental frequency of the spectrum of the square wave? What is the magnitude of the fundamental frequency component of the spectrum of the square wave?
Compute the homogeneous solution yh(t). Compute the particular solution yp(t).
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