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Develop the pseudo-code for a program that will retrieve 2 bytes (NUM1 and NUM2) from memory, determine which is closest to the numeric value 50, and indicate the result by setting a variable named "CLOSEST" to 1 (if 1st byte is closest) or 2 (if 2nd byte is closest).
1. Determine Laplace transform of (2-2e^-4t)u(t) 2. Determine if x(t) = 9cos(2t)+4sin(pi t) is periodic; if periodic, calculate the period. 3. Compute the inverse Laplace transform of X(s)= (s+2)/(s^2+ 7s + 12).
Calculating a DC Current through the telephone handset, A telephone handset has a resistance of 600 ohm. It is connected to the local telephone exchange at a distance of 5 km by a twisted pair that has a loop resistance of 200 ohm per km
A wave propagates 50m through a dielectric of region 1. Region 1 is lossy. Here, f= 0.6 Np/m. At an interface to region 2, the reflection coefficient is r =0.2+j0.5. The wave then propagates 50m back into region 1 from where it originated.
A discrete-time LTI system has the impulse response h[n]. Use linearity and time invariance to determine the system output y[n] if the input is h[n]={-2:n=-1, 3:n=0, 2:n=3, -4:n=5}
1. Calculate the total (composite) load power factor, true power, reactive power and apparent power. 2. Also calculate the full-load current and the amount of capacitive KVAR needed to bring the overall power factor to .95 lagging.
The flux through the window of a 20-turn coil varies with time in the following manner: flux=1.2 sin(28*t) Wb. Determine a) the frequency and rms value of the voltage generated in the coil, b) the equation representing the voltage wave.
Design a 3-input CMOS OR-gate using MOSFETs on the CD4007 chip. Make certain that the power dissipation is zero when the output is both logic 1 and logic 0. As an added challenge, design the OR gate using the minimum number of CD4007 chips.
A n-type Si wafer is doped with Nd=1e15/cm^3, find the level of acceptor doping we need to convert the wafer from n-type to p-type, with a target hole density p=5e15/cm^3. also ni = 1e10/cm^3
The question considers the design of a 8x1 multiplexer using gates. Assume the data inputs are I0,...,I7 and the select inputs are S2, S1 and S0. (a) Write a sum-of-products expression for the 8x1 multiplexer.
(a) Convert the expression for f(x, y, z) = fm(1, 3, 7) from minterm list from to maxterm list form. (b) Convert the expression for f(a, b, c, d) = fM(0, 1, 2, 3, 4, 6, 12) from maxterm list from to minterm list form.
An electric dipole has opposite charges of 5.0x10^-15 C separated by a distance of .40mm. It is oriented at 60 degrees with respect to a uniform electric field of magnitude 2.0x10^3 N/C. Determine the magnitude of the torque exerted on the dipole ..
Does the degree of difficulty change when switch from solving a two loop mesh circuit to a three loop mesh circuit Why and why not
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