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1. The dam shown below is 100 m wide. Determine the magnitude and location of the force on the inclined surface.
2. The float in a toilet tank is a sphere of radius R and is made of a material with ρ. An upward buoyant force F is required to shut the ballcock valve. The density of water is designated ρw. Develop an expression for x, the fraction of the float submerged, in terms of R, ρ, F, g, and ρw.
Determine the Values of Resistors R1 and R2 - Determine the Minimum Acceptable value for the coupling capacitor C if the lowest frequency of the incoming signal is 1.2kHz.
The data in the table attached were obtained when open circuit and short circuit tests were performed on a single phase 50kVa, 2400:240 V, 60 Hz distribution transformer Please show all steps and explanations
A Transconductance amplifier is to be used to interface a voltage signal Vs(t) to a resistive load R(L)=5k ohms. The signal source is represented by a Thevenin equivalent circuit with a source resistance R(S)=20k ohms.
Sketch the phasor diagrams for the following waveforms: v1 = 80sin(pi*t + 35°)(a) What is the phase difference between v1 and v2 (b) Determine which voltage leads and which lags.
A disk located at 0
Derive the conversion factor between r (CM⋅Ω/ft) and r (Ω⋅cm) by - Solving for ρ for the wire of Figure in CM⋅ Ω/ft.
Calculate the mobility of the oxygen ions in UO2 at 700 K. The diffusion coefficient of Oz- at this temperature is 10- 13 cm zls. Compare this mobility with electron or hole mobilities in semiconductors (see Appendix 4). Discuss the difference!
What is a delay loop and how is it developed?
8. Given the following RC circuit with zero initial condition on the C1 voltage: a. Determine the time constant. b. Write the mathematical equation for the voltage on C1 following the closing of the switch.
Determine the Fourier Series representation of the signal x(t)=-1-2cos(27pi(t)-(pi/4))+cos(63pi(t)-(pi/2)).Sketch the two-sided spectrum of the same signal above.
Use Mat lab to charge neutrality equation in order to plot the Fermi level as a function of doping vs. temperature for Si, GaAs, SiC, and GaN. Using Phosphorous as a donor dopant at 1e18, 1e16, 1e14, and 1e12 for each material above
If it is possible to determine whether a circuit is in resonance given only the RMS values, explain how it could be done. If it is not possible, explain what further information you would have to have.
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