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Determine whether the Boolean funcions F=a'c+ab'c+ab and G=b'c+a'bc+abc+ab are equivalent using algebraic manipulation.
determine the corediameter required for the fiber topermit its operation over the wavelength range 1.48 to 1.60um. calculate the new fiber core diameter to enable single mode transmission at a wave length of 1.30um.
Shielding Effectiveness with copper and steel at equality, Determine the frequency at which two 1 mm thick shields, one made of copper and the other of steel
Draw the logic diagram for the following Boolean expressions. The diagram should correspond exactly to the equation. Assume that the complements of the inputs are not available. a.) XYZ+X'Y'+X'Y'
Calculate the maximum power that can be sent through an a=2cm , b=1cm air-filled waveguide at 12 GHz such that dielectric breakdown does not occur. Assume that the dielectric strength of air at atmospheric pressure is 3x10^6 [V/m]
looking for a brief theory on touch voltage, step voltage and ground potential rise (GPR). Should include graphical representation and relevant equations to help in understanding.
A 415V to 11 kV transformer has a rating of 200 kVA. The winding resistance and leakage reactance when referred to the primary are 0.014 and 0.057 ohms respectively.
Tune PI Parameters, Question: Given are the facts that Gc and Gp(s) are in series and Gp(s) = (K * Km) / [s[(Ls+R)(Js+b) + K^2m)]].
A system is needed to measure flow, which continuously cycles between 20 and 30 gal/min with a period of 30 sec. The required output is a voltage varying from -2.5 to +2.5 V for the cycling flow range. The sensor to be used has a transfer function..
Develop the pseudo-code below for a program that will retrieve 2 bytes (NUM1 and NUM2) from memory, determine which is closest to the numeric value 50, and indicate the result by setting a variable named "CLOSEST" to 1 (if 1st byte is closest) or ..
Built-in voltage for a Si p-n junction is tested to be 0.6 V, NA = 2 X 10^15 cm^-3 on p side. Find ND on n side. (Assume ni = 1 x 10^10 cm^-3; and k*T/q= 0.026 V)
Plot how this absorbed power varies with signal strength W12, and discuss the behavior especially at very small and very large W12. Where does the absorbed power go? -and how does it get there?
Explain in detail on the fabrication process of the FINFET. You must show a 3-dimensional view of FINFET and label the its L and W, the length and width of the gate.
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