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Two 660V(rms) loads are connected in parallel. The two loads draw a total average power of 52,800 W at a power factor of 0.8 leading. One of them draws 40K VA at a power factor of 0.96 lagging. What is the power factor of the other load?
The s-plane diagram of a filter shows that it has a cluster of four poles in the left-half s-plane that are arranged in a semi-circle near +/- j628. The filter also has two zeroes at the origin.
What is the clearance requirement for a 120/240 V, single-phase, three-wire service at the point of attachment to the building Over the driveway Over the main roadway
An initially uncharged 2 microfarad capacitor is connected in series with a 10 k-ohm resistor and a 12 V battery. Find the charge and voltage on the capacitor after a very long time and find the voltage and charge on the capacitor after one time co..
Suppose we have a causal LTI system with rational system function H(s). We don't know H(s), but we do have the following information: i. When the input to the system is x(t) = u(t), the output y(t) is absolutely integrable.
A power supply, when connected to a radio, provides 5V to the radio. When connected to a lamp, it provides 4V to the lamp. Assume the radio can be modeled as 6ohm resistor and the lamp can be modeled as a 0.7ohm resistor.
Consider the analog filter H(s)=30000/(s^2+400s+30000) , notice that the filter gain in the passband is unity or 0 dB. You can also use MATLAB command "roots" to check for the poles that are p_1=-100 rad/s, and p_2=-300 rad/s.
A DS-SS system requires 40 db of CW rejection of an interfering signal. it uses an 8-stage shift register m-sequence generator and transmits 1.5 kbps binary message data an a 2 GHz carrier. What clock code is required and what is the first null ba..
If 2*10^15 gold atoms per cm^3 are added to intrinsic silicon as a substitutional impurity and are distributed uniformly throughout the semiconductor, determine the distance between gold atoms in terms of silicon lattice constant.
Consider a GaAs MESFET. When the device is biased in the saturation region, we find that Id = 18.5µa and Vgs=.35 V and Id=86.2µa at Vgs=.5V. Determine the conduction parameter k and the threshold voltage Vtn.
The donor ground states for tellurium in GaAs are 5.9 meV below conduction band (there are 2 of them because of spin). Atroom temperature (300 K), what is probability that a given ground state is occupied if the Fermi level (Ef) is 0.1 eV below Ec
A microwave transmitter has an output of 0.1W at 2GHz. Assume that this transmitter is used in a microwave communication system where the transmitting and recieving antennas are parabolas, each 1.2m in diameter.
(1) check a diode out with a regular ohm meter (2) Give an example of where a half wave, full wave or bridge rectifier is used. (3) What sizes of transformers are used for power lines
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