Determine the transconductance in the saturation region

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Reference no: EM13226647

Determine the transconductance in the saturation region for the n-channel MOSFET using the following paramters at room temperature.

1. p type Si density = 2.8*10^15 /cm^3

2. Si intrinsic carrier concentration = 8.6*10^9 /cm^3

3. Metal-semiconductor work function difference = -1.01 V

4. Qss/q = 2*10^10 /cm^2

5. oxide thickness = 1000 A (1*10^-7 m)

6. Si electron mobility 600 cm^2/V-sec

7. Channel length = 16 microns

8. Channel width = 30 microns

9. Gate Voltage = 3v, no charge distribution inside oxide

Reference no: EM13226647

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