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Figure 2.37 shows a p-type bar of silicon that is subjected to electron injection from the left
and hole injection from the right. Determine the total current flowing through the device if the cross section area is equal to 1 μm ×1 μm.
A 50 V DC power supply is connected to a 100 Ohm load resistor. The tested current flowing through the resistor is 0.49 A. find the internal resistance of the DC power suppy.
You must use the internal resistance of the one shot, and an external resistor. Besides your calculations, draw the one-shot and show how to connect the appropriate resistors, capacitors, Vcc, etc
A single-phase transformer has 480 turns on the primary and 90 turns on the secondary. The mean length of the flux path in the core is 1.8 m and the joints are equivalent to an airgap of 0.1 mm. The value of the magnetic field strength for 1.1 T i..
Given the ratings of a single-phase transformer - 3kVA 220V/110V 50 Hz, calculate the rated current for the primary winding and the rated current for the secondary winding. The currents in the transformer should not exceed these values during the ..
A 300 ohms resistor is connected across the 300 ohms antenna input of a television receiver. The bandwidth of the receiver is 6 MHz, and the resistor is at room temperature (20' C). Find the noise power and noise voltage applied to the receiver in..
The repulsive force one exerts on the other when they are 20cm apart is 1.35 X 10-4 N. after the balls are touched together and then represented once again to 20cm, now the repulsive force is found to be 1.40 X 10-4 N. find the charges q1 and q2.
Now assume that the victim's DNS cache has a genuine NS record for the domain the attacker is targeting. i. Can the attacker still be successful at poisoning the A records for some of the names belonging to the domain?ii. Can the attacker poison th..
A p-type wafer has a diffused Phosphorous n-type junction with a junction depth of 0.15µm. a) If the wafer (no pre-existing oxide) is to be oxidized at 1000-oC for two hours to form a ‘dense, non-porous, high-quality' gate oxide.
Why Can Discrete-Time FIR Digital Filters be a Linear Phase, Why can discrete-time FIR digital filters be made exactly linear phase, whereas IIR digital filters cannot?
Find VDSQ and IDQ for the FET shown in Figure, given Vto = 3 V and K = 0.5 mA/V2. Find the value of gm at the operating point. Draw the small-signal equivalent circuit, assuming that rd =∞. Derive an expression for the resistance Ro in terms of RD..
A separately excited DC generator,when running at 1200 RPM, supplies 200A at 125V to a circuit ofconstant resistance. What will the current be when the speed is dropped to 1000 RPM if the field current remains unchanged
A 50 kw, 120 - V shunt generator has Ra = 0.09 ohm, Rfw = 30 ohm and external field resistor Rfx = 15 ohm. The generator delivering the rated load at terminal voltage. a. find generated emf Ea
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