Determine the time required to obtain the desired thickness

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Reference no: EM13254185

A thermal oxide of thickness 120 nm needs to be grown on a silicon wafer (100) in dry oxygen. If the process integration issue requires having a temperature not higher than 1050 degreeC, determine the time required to obtain the desired thickness. The wafer is put back into the furnace and used with steam to obtain a total thickness of 0.5µm. Calculate the time taken to obtain the additional thickness.

Reference no: EM13254185

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