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A three-phase, 2300-V, 60-Hz, cylindrical-rotor synchronous motor has a synchronous reactance of 10 ohms per phase and negligible armature resistance. The motor delivers 250 hp at a power angle of 20 electrical degrees, and the efficiency is 90%, Determin: a. The excitation voltage b. The stator current c. the power factor
Box 1 contains 1000 Integrated Circuits of which 10% are counterfeit. Box 2 contains 2000 Integrated Circuits of which 5% are counterfeit. Externally, all IC's look identical. Two integrated circuits are picked from a (single) randomly selected bo..
a. Describe the operation of a typical NMOSFET transistor used both as an amplifier and a switch. b. List the 3 regions of operation and draw the I-V characteristic curve. c. Show the effect of channel length modulation on your graph.
what is the shortest possible line length that would exhibit the desired reactance at its input?
A baseband sine wave signal with frequency 4.0 kHz is modulated onto a carrier at 1.050 MHz using DSB-LC AM. What are the frequencies of the sidebands of the RF signal?
How do we deal with a L1 cache that is Write-back Write allocate, and the L2 cache, which is a Write-through Write no-allocate?
Explain briefly from what you notice about the digital output values in (a) why a digital output value of an A/D converter is rarely the exact same digital value as the analogue input value.
Data at a rate of 2 Mbps is to be transmitted via a pass-band communication system whose carrier frequency is 500MHz. A binary antipodal system with roll-off factor of 0.2 is used for this communication. The AWGN single-sided power spectral densit..
Design a 1024x16 RAM using the 256x8 RAM blocks and neccessary combinational circuit. Note that, 256x8 RAM block has 8 bit data (DATA), 8 bit address (ADRS), chip select (CS), read/write (R/W) inputs and a three-state output bus.
A junction employs Nd = 8x 10^17cm^-3 and Na= 2 x 10^ 17 cm^-3. The device is at 300K. (a) determine the majority and minority carrier concentrations on both sides (b) Calculate the built-in potential at (i)T=250K (ii)300K
an unknown semiconductor has Eg=1.1ev and Nv=Nc.it is doped with 10^15 donors,where the donor level is 0.2ev below Ec. given that Ef is 0.25ev below Ec, calculate ni and the concentration of electrons and holes in the semiconductor at 300k.
What is the channel capacity for a channel with a 300 Hz bandwidth and as S/N = 3? 2nd problem: Given a channel with a 50 kHz bandwidth and a S/N = 127, determine:
What are the names of the three regions of the bipolar junction transistor Why is there a thin region of one material type "sandwiched" between two layers of the opposite material type
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