Reference no: EM132174502

Question 1: (a) A silicon dioxide gate insulator of an MOS transistor has a thickness of t_ox = 120 Å. (i) Calculate the ideal oxide breakdown voltage. (ii) If a safety factor of three is required, determine the maximum safe gate voltage that may be applied. (b) Repeat part (a) for an oxide thickness of fox = 200 Å.

Question 2: In a power MOS transistor, the maximum applied gate voltage is 24 V. If a safety factor of three is specified, determine the minimum thickness necessary for the silicon dioxide gate insulator.

Section - Transistor dc Analysis

Question 3: In the circuit in Figure P3.26, the transistor parameters are V_TN = 0.8 V and K_n = 0.5 mA/V². Calculate V_GS, I_D, and V_DS

Figure 3.26

Question 4: The transistor in the circuit in Figure P3.27 has parameters V_TN = 0.8 V and K_n = 0.25 mA/V². Sketch the load line and plot the Q-point for

(a) V_DD = 4 V, R_D = 1 kΩ and (b) V_DD = 5 V, R_D = 3 kΩ. What is the operating bias region for each condition?

Question 5: The transistor in Figure P3.28 has parameters V_TN = 0.4 V, k_n' = 120 μA/V², and W/L = 80. Design the circuit such that I_Q = 0.8 mA and R_in = 200 kΩ.

Question 6: The transistor in the circuit in Figure P3.29 has parameters V_TP = -0.8 V and K_p = 0.20 mA/V². Sketch the load line and plot the Q-point for
(a) V_DD = 3.5 V, R_D = 1.2 kΩ and (b) V_DD = 5 V, R_D = 4kΩ. What is the operating bias region for each condition?

Question 7: Consider the circuit in Figure P3.30. The transistor parameters are VT? = -0.8 V and Kp = 0.5 mA/V². Determine ID,VsG, and VSD.

Question 8: For the circuit in Figure P3.31, the transistor parameters are V_TP = -0.8 V and K_p = 200 μA/V². Determine Vs and V_SD

Question 9: Design a MOSFET circuit in the configuration shown in Figure P3.26. The transistor parameters are V_TN = 0.4 V and k'_n = 120 μA/V², and R_D = 5kΩ. The circuit parameters are VDD = 3.3 V and RD = 5 kΩ. Design the circuit so that V_DSQ ≅ 1.6 V and the voltage across Rs is approximately 0.8 V. Set VGS = 0.8 V. The current through the bias resistors is to be approximately 5 percent of the drain current.

Question 10: Consider the circuit shown in Figure P3.33 The transistor parameters are V_TN = 0.4 V and k'_n = 120 μA/V². The voltage drop across R_s is to be 0.20V. Design the transistor W/L ratio such that V_DS = V_DS (sat) + 0.4 V, and determine R₁ and R₂ such that R_in = 200kΩ.

Question 11: The transistor parameters for the transistor in Figure P3.34 are VTN = 0.4 V, kn' = 120 μ,A/V², and W /L = 50.

(a) Determine V_Gs such that I_D = 0.35 mA. (b) Determine V_DS and V_DS (sat).

Question 12: For the transistor in the circuit in Figure P3.35, the parameter are V_TN = 0.4 V, k'_n = 120 μA/V², and W/L = 25. Determine V_GS, V_DS. Sketch the load line and plot the Q -point.

Question 13: Design a MOSFET circuit with the configuration shown in Figure. The transistor parameters are V_Tp = -0.6 V, kp' = 50 μ A/V², and λ = 0. The circuit bias is ±3 V, the drain current is to be 0.2 mA, the drain to source voltage is to be approximately 3 V, and the voltage across R_S is to be approximately equal to V_SG. In addition, the current through the bias resistors is to be no more than 10 percent of the drain current. (Hint choose a reasonable value of width-to-length ratio for the transistor)

Question 14: The transistor in the common-source amplifier in Figure P4.20 has parameters V_TN = 0.8 V, k'_n = 100 μA/V², W/L = 50, and λ = 0.02 v^-1. The circuit parameters are V⁺ = 5 V, V^- = -5 V, IQ = 0 5 mA, and RD = 6 kΩ.

(a) Determine V_GSQ and V_DSQ.

(b) Find the small-signal voltage gain for R_L = ∞.

(c) Repeat part (b) for R_L = 20 kΩ.

(d) Repeat part (b) for R_L = 6 kΩ.

Question 15: The parameters of the MOSFET in the circuit shown in Figure P4.21 are V_TN = 0.8 V, K_n = 0.85 mA/V², and λ = 0.02 V^-1. (a) Determine R_S and R_D such that I_DQ = 0.1 mA and V_DSQ = 5 5 V. (b) Find the small-signal transistor parameters. (c) Determine the small-signal voltage gain.