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Consider a MOS device with the following parameters: Aluminum gate, p- typ_e silicon substrate, oxide thickness of 20nm, and surface fixed oxide charge of 4x1010 cm-2(a) Determine the doping concentration such that the threshold voltage is 0.5V.(b) Determine the resistivity of the substrate.(c) Calculate the oxide electric field.
A potentiometer is wired to represent a range of 0 - 180 degrees. The potentiometer is supplied with a voltage of 15 Vdc. What is the output voltage at 75 degrees
Magnitude bode plot for any given transfer function Can some one teach me an easy way to make a bode plot for any given transfer function magnitude only (not phase).
Design an nbit divider using repeated subtraction algorithms draw the ASM chart and design the data path and control unit for the divider.
The power amplifier for a car stereo amplifier has a rated output power of 750 watts when operating at room temperature. Assuming a Class B amplifier with the maximum theoretical efficiency is used,
Design the simplest circuit that has three inputs, X1,X2, and X3, which produces an output value of 1 whenever exactly one or two of the input variables have the value 1; otherwise, the output has to be 0.
how many different values may any base 9 digit have What is the highest value allowedf for any base 9 digit
An OpAMP has a unity gain frequency (ft) of 10MHz and a slew rate of 10V/us and AVoc = 120dB at DC (f=0).Assume VCC = -VEE = 15 Volts. a. Approximate the cutoff frequency of the OPAMP itself.
The signal x(t) = 20*sinc2(400t) is input to a ring moodulator. Sketch the spectrum of vout and find the range of values of fc that can be used to transmit this signal.
To familiarize yourself with the Internet Standards, search the Internet for the IETF RFC website. Using the information you find on this site, answer the following questions: Identify four types of Internet standards.
Concider an ac circuit source with an rms amplitude Irms connected to a parallel RLC circuit with resistance R, inductance L, and capacitance C. Derive an expression for the time-average power dissipated by the circuit
A wafer 100mm in diameter is mounted in an electron-beam evaporation system in which spherical radius is 40cm. Estimate the worst case variation in film thickness between the center and edges of the wafer for an evaporated aluminium 1micro meter t..
Design a Double Sideband Amplitude Modulation (DSBAM) modulator and demodulator system using the SystemView software. The modulating wave m(t) = Amcos(2pifmt) and the carrier wave c(t) = Accos(2?fct) have the following parameters
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