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a 230-V shunt motor, having an armature resistance of 0.05 and a filed resistance of 75, draws a line current of 7 A while running light at 1120 rpm. the line current at a given load is 46 A. determine
a) the motor speed at the given load,
b) motor efficiency, and
c) total core and mechanical losses.
a The cosmic background radiation has a temperature of 2.725 °K. At what wavelength is this radiation most intense b If the most intense radiation of a blackbody occurs at 1000 nm, what is its temperature
As long as output is available on the disk, process O will eventually consume it.Show that this system can become deadlocked.
Assume the wire capacitance in the ROM array is negligible compared to the gate and diffusion capacitance. Assume the ROM cells are laid out such that two cells share a single diffusion contact and hence each contributes only C/2 of diffusion capa..
Use the simulation timing diagram to compare the worse case time to do an operation with your ALU with the worst case using the 74LS381. State which operation takes the longest and list the time required for both ALU's.
Determine the required value of H to eliminate the effect of the disturbance.
Zener Diode and Series Resistance, In the zener diode circuit calculate the value of the current through the zener diode if the power supply is rated 24 volts at 500 milli amperes
DRAW A COMPLETE STATE DIAGRAM OF A FINITE STATE MACHINE THAT DETECTS THE EXACT PATTERN 11100 IN A SERIAL STREAM OF INCOMING BITS. WRITE A TRUTH TABLE AFTER DETERMINING NUMBER OF FLIP-FLOPS REQUIRED
A 120V, 60Hz AC induction motor is in parallel with a power factor correction capacitor. The capactior has a value of 50 micro Farads and produces a minimum line current of 2 ohms. Determine the running impedance of the motor in cartesian coordina..
A semiconductor Sw shown in fig is operated at a frequency of 20 kHz and D= 0.5. The circuit operated in Steady state.- Calculate the power transformed from Dc voltage source V1 to V2.
Include the signal source and load and derive an expression for the overall gain
A Si sample is uniformly doped with phosphorus at 5 E 16 cm^-3. We make a p-n junction by implanting boron atoms into the surface layer. The implanted depth is 0.15 µm. What should the surface concentration of the boron implant
For the closed-loop system with plant model and controller given by G(s) = (s2+81)/(s2(s2 + 100)) D(s) = (K (S+1))/(S+13) (a) Find the locus of the closed-loop roots (poles) with respect to K;
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