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A generator uses a coil that has 110 turns and a 0.475 T magnetic field. The frequency of this generator is 43.0 Hz, and its emf has an rms value of 230 V. Assuming that each turn of the coil is a square (an approximation), determine the length of the wire from which the coil is made.
A circular coil of 200 turns of radius a=60mm, total resistance R=2 ohm, and no self inductance is rotated about a vertical diameter with uniform angular velocity =200 rad/s in a horizontal magnetic flux B of 0.25 Tesla.
Sketch the Capacitance-Voltage characteristics for both devices based on part (d) by giving appropriate labeling to the voltage and capacitance axis. You may assume high f measurements.
Write a program in C not C++ that reads 20 integers from the user and sums the odd and even numbers together. Also have the program output the ratio of the odd numbers to the even numbers.
a half wave rectifier circuit with a 1K ohm load operates from a 120V rms 60-Hz household supply through a 10-to-1 step down transformer. It uses a silicon diode that can be modeled to have a 0.7V drop for any current.
A parallel RLC circuit is constructed using a 1 mH inductor anda 12 μF capacitor. a) Select R such that the circuit response is critically damped. b) If vC(0-) = 12 V and iL(0-) = 0 A, find an expression for vC(t)value for t > 0 s.
The built-in voltage of a GaAs pn junction diode is 1.25 V when the diode's temperature is T = 320 K. The cathode region of the diode is doped with phosphorus at a concentration of 1017 cm-3. Determine the required doping concentration in the anod..
Explain charge sharing in dynamic circuits. For a 3-input dynamic NAND gate, discuss charge sharing, and explain the design requirements under which the gate operates correctly in the presence of charge sharing.
electronic technology in relationship to the use of personnel and access control, surveillance, and identification of authorized personnel.
A carousel, starting from rest, is brought to a full rotational speed of one revolution per 5.00 seconds. The angular acceleration during the process is 0.300 rad/s2. The radius of the carousel is 6.00 m.
Consider a Si p-n junction with n-type doping concentration of 10^16 cm^-3. This junction is forward bias with V=0.8 V at 300 °K. Calculate the minority-carrier hole concentration at the edge of the space charge region.
A 15hp (output power), 208V, three phase, six pole, y-connected induction motor has the following parameters: R1 = 0.1 ohm R'2= 0.1 ohm Xeq = 0.5 ohm A.) A fan type load is connected to the motor. The slip of the motor in this case is 2%.
A switch is made with an n-channel MOS device in a technology for which oxide thickness is 20 nm, minimum channel length is 1 um, unCox = 100 uA/V2, and VTH = 0.8 V. The devices operates in deep triode (i.e. small VDS)
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