Reference no: EM13885810
Consider the low frequency Clf/Cox versus CG curve in figure 1. It is for a MOS capacitor with a p-type substrate (NA = NA1), a metal gate and VFB = 0. Draw the Cif/CCox versus VG curve for the device if the metal gate is replaced with a p-type poly-Si gate doped to NA = NA1. Explain your answer.
Figure 1. lf CV characteristics of a MOS capacitor
The subthreshold ID-VG curves of a MOSFET are shown in Figure 2 before and after stressing the device. Determine the interface trap density change ΔDit (in cm-2eV-1) induced by the stress. T = 300K, εox = 3.9, tox = 10 nm.
Figure 2. Transfer characteristics of a MOSFET before and after stress
You may find the following useful: ?Dit = Cox/2.3kT.(1/(slope before)-1/(slope after))
Why do the low frequency and high frequency CV curves differ in inversion?
Using the transfer characteristics shown in Figure 3 (VD = 2V; W/L = 10:1). Calculate the following:
The threshold voltage
The field effect mobility
Figure 3. Transfer characteristics of a TFT
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: Why do the low frequency and high frequency CV curves differ in inversion and determine the interface trap density change
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