Determine the impurity doping concentration in each region

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Reference no: EM13274305

A silicon abrupt junction in thermal equilibrium at T=300 K is doped such that Ec-Ef=0.21 eV in the n region and Ef-Ev=0.18eV in the p region.
(a) draw the energy band diagram of the pn junction.
(b) determine the impurity doping concentration in each region.
(c) determine Vbi.

Reference no: EM13274305

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