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A signal x(t) can be represented as x(t)=xe(t)+xo(t)
where xe(t)=(1/2){x(t)+x(-t)} is the even part, and xo(t)=(1/2){x(t)-x(-t)} is the odd part of the signal.
Let x(t) be an energy signal with an energy of 20 Joules. Suppose the even part of x(t) is xe(t)=2e^(-|t|)
Determine the energy in xo(t), the signals odd part, and xe(t), the signals even part.
A design for high pass filter with butterworth characteristic is needed. Filter specification rewquire a cut-off frequency of 9 kHz for a sampling rate of 44 kHz, and a stop band attenuation of 40dB
A transmission line with no loss, with Z0= 60 ohms, is operated at 60MHz. The velocity on the line is c. The line is soldered to a ground connection at z=0. Find the input impedance into this line at z= -1.25 meters
explain the function of frequency dial and frequency range.
Explain the term 'multiplexing' in general and describe why it is particularly important in the transmission of PAM signals and describe the main factors upon which the maximum data rate over a channel depends.
In Mips when you use addi or any other commands in which you use a 16 bit value for a reg. value or address offset what operation is done to check if its is a negative number's two's complement or just a regular binary number
A thyristor is triggered by a pulse of train of 5kHz.The duty ratio of the pulse train are 0.5. If allowable average gate power is 100W, calculate the maximum allowable gate drive power.
An AC sine wave is applied to the input of a full wave rectifier. The output of the full wave rectifier is then applied to a half wave rectifier.
Write a brief explanation of the principles of the super-heterodyne receiver. It may help to use a simple block diagram to express the process. Explain the purpose of the Intermediate Frequency amplifiers,
Suppose you have a line charge and a point charge in space. A point charge of 16nC is located at Q(2,3,5) in free space, and a unifor line charge of 5nC/m is at the intersection of the planes x=2 and y=4. If the potential at the origin is 100V, fi..
A wafer 100mm in diameter is mounted in an electron-beam evaporation system in which spherical radius is 40cm. Estimate the worst case variation in film thickness between the center and edges of the wafer for an evaporated aluminium 1micro meter t..
The forward-bias current in a GaAs pn-junction at T = 300 K is ID = 15 mA. The reverse-saturation current is IS = 10^-19 A. Determine the required forward-bias diode voltage.
Suppose that the sequence 110010011 is used as a synchronization sequence preamble to a data packet. Propose a method that can be used to allow the channel to distinguish the synchronization sequence from an identical data sequence within the pack..
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