Determine the concentration of donor impurity atoms

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Reference no: EM13225772

A silicon sample at T = 300 K contains an acceptor impurity concentration of \(N_{A}\) = 1016 cm-3. Determine the concentration of donor impurity atoms that must be added so that the silicon is n-type and the Fermi energy is 0.20 eV below the conduction band edge.

Reference no: EM13225772

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