Determine the built-in potential and schottky barrier height

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Reference no: EM13262645

The following parameters of an ideal metal-semiconductor contact are known: 5eV for metal work function, 4.05eV for semiconductor electroaffinity, effective density of states for conduction band is 1019cm3, n-type doping density is 1015cm3, semiconductor dielectric constant is 11.8.
(a) draw its energy band diagram with proper labeling.
(b) calculate the built-in potential and barrier height if it is a Schottky barrier or if it is not rectifying explain why.
(c) calculate the depletion width and the corresponding capacitance at zero bias.
(d) describe a general method step-by-step that can be used to determine the built-in potential and Schottky barrier height of a Schottky barrier diode

Reference no: EM13262645

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