Determine density of mobile charge at semiconductor surface

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Reference no: EM13279883

The oxide thickness of a MOS capacitor is 4 nm. The silicon substrate is N-type (doping level ND = 7x10^16cm-3), and the gate is heavily doped N+-type polysilicon. Assuming zero oxide charge density, determine the density of mobile charge at the semiconductor surface, if the voltage applied between the gate and the substrate is -1.5 V.

Reference no: EM13279883

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