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desgin an 8-bit 2' complementer using sequentail circuit . you may use one register to store the data to be complemented, one register to store the complemented data, one half adder and one D-flip flop with other gates/registers . take each to be 8-bits
What is the minimum Eb/Ieff (bit energy over effective noise energy) to yield P(e)
For Each Pair of Second-order systems specifications that follow, find the locations of the second order poles a) Overshoot %= 12% , Ts= 0.6 seconds b) Overshoot %= 10%, Tp= 5 seconds c) Ts= 7 seconds, Tp= 3 seconds
Problem Feeder - Transformer, A single-phase load is supplied through a 35 kV feeder whose impedance is 115 + j380 Ohms and a 35 kV, 2400 V transformer whose equivalent impedance is 0.26 + j1.21 Ohms referred to its low voltage side.
Describe the phenomenon of aliasing caused by under sampling. How can aliasing be mitigated What are the advantages of digital communication over analog What is quantization noise How can you reduce it
A switching circuit has three inputs (A,B,C) and one output (Z). If A=0, the output Z is the exclusive-OR of B and C. If A=1, the output is the equivalence of B and C. (a) Find the truth table for Z.
A spherical shell is 20 cm thick, with an inner radius of 40 cm. If the charge density is given by 10.4 ×10-3 C/m3 a) Find the total charge Q and Explain why this value of Q is irrational (from a physical, not just mathematical, point of view
Design a 4-bit decrementer using Half-adders and inverters as building blocks. The circuits impleents A-1=S. Draw the circuit diagram. Hint: consider addtion of the 2s complement of -1 =1111. Begin with a 4-bit adder circuit constructed with 1-bit..
Write and test a program for the EASy68k to input a string from the keyboard and output a reversed string to the screen. Use a subroutine to perform the string reversal operation.
An unknown semiconductor has Eg = 1.1 eV and Nc = Nv. It is doped with 10^15 cm^-3 donors where the donor level is 0.2 eV below Ec. Given that Ef is 0.25 eV below Ec, calculate ni and the concentration of electrons and holes in the semiconductor a..
The NF (dB) is defined as 10log(SNRin/SNRout) - in the unit of dB. If we are given the values of SNRin and SNRout in dB unit, how do we calculate NF (dB) in terms of dB, and how do we calculate NF in term of a pure ratio
contrast the electron and hole drift velocities through a 10-µm layer of intrinsic silicon across which a voltage of 5 V is imposed. Let µn = 1350 cm²/V·s and µp = 480 cm²/V·s.
Consider a continuous-time LTI system with frequency response of H(j omega) = 1 + j 250 omega/(2 - j 50 omega)2 Find the expression for the magnitude of H(j omega) and sketch its Bode plot (sketch asymptotes and the magnitude curves).
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