Design metallurgical channel thickness of n-channel jfet

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Reference no: EM13271085

Design (determine) the metallurgical channel thickness of an n-channel silicon JFET such that the pinch off voltage is -3.0V. The doping parameters are NA=3x1018cm-3 and Nd=2x101616 cm-3.

Reference no: EM13271085

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Design metallurgical channel thickness of n-channel jfet : Design (determine) the metallurgical channel thickness of an n-channel silicon JFET such that the pinch off voltage is -3.0V. The doping parameters are NA=3x1018cm-3 and Nd=2x101616 cm-3.

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