Design a wafer structure for the laser

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Reference no: EM13280272

Graded-index separate confinement double heterostructure (GRIN-SCH) InGaAs/GaAs lasers with various cavity lengths were tested in the lab. The 100m wide oxide strip lasers consists of two pairs of 10nm In0.2Ga0.8As quantum-well (QW). The barriers of the lasers are 10nm GaAs (undoped). The lasers give a lasing wavelength around 970nm at room temperature. The refractive index of the active InGaAs layer is 3.4.

Design a wafer structure for the laser. Sketch the bandgap diagram of the laser.

Reference no: EM13280272

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