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Design a uniform ordinary end-fire array to have a half power bandwidth (HPBW) no greater than 100°, namely :
i- find the number of elements N, take the inter-element spacing d=λ/8.
ii- find the relative side lobe level.
iii- now, repeat your design according to Hansen-Woodward priciple and find the current phases and new HPBW.
Determine the surface charge density on each conductor.
The accompanying schematics each show two inductors with coupling but with different dot markings. For each of the two systems, determine the equivalent inductance of the system at terminals 1-1' by combining inductances.
Design a 4-element broadside array with equal side lobe level of -20 dB relative to the peak value , take the inter-element spacing d=λ/2 , find the resulting beamwidth to null.
mutual shifted by 90 degree currents through each of both windings of the single phase A motor are (5.5+1.7) A but RMS voltage of the supply is 220 V. How big will be torque on shaft of the motor is efficiency factor (\eta\) is 0.7
a) An Si p+-n junction has A=1/100 cm^2 and N(donor)=10^15/cm^3 on the n side. Calculate junction capacitance with reverse bias of 10V. b) An abrupt p+-n junction is formed in Si with donor doping of Nd=10^15 / cm^3.
Three loads 3+4j are connected in delta to a 208-V, three phase line find line current, power factor, real power, reactive power and complex power
Write a report on Future Generation Telecommunication Technology.
13A flows through the coil of a DC motor. The coil has a length of 0.4m and 0.3m. The coil has 36 windings and a flux of 0.21 Wb. If its rotational frequency is 936 r/min, calculate output power of the motor.
The armature of a simple DC generator is rotating at a speed of 188.5 rad/s. If the armature consists of 3 turns per coil, and a current is flowing in the field coils such that the field coils produce a flux of 0.0333 Wb
a. Describe in your words why I_G is effectively 0A for a JFET transistor b. Why is the input impedance to a JFET so high c. Why is the terminology field effect appropriate for this important three- terminal device
Consider the Norton equivalent circuit with respect to terminals 'a' and 'b' for the circuit shown below. Suppose that Ro is given as 10 . The Norton equivalent current must be zero because there are no independent sources.
In a certain crystalline material the vacancy concentration at 25*C is one-fourth that at 80*C. At what temperature would the vacancy concentration be 3 times that at 80*C 2. Suppose one attempts to add a small amount of Ni to Cu in an effort to cr..
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