Design a photolithography and metallization sequence

Assignment Help Chemical Engineering

Reference no: EM131216636

1. Draw a layout, in top view and perspective, where the mask would be opaque to realize an "+" shaped metal line using a positive resist and the lift-off technique.

2. Do the same as Problem 1, but using a negative resist.

3. Design a photolithography and metallization sequence of steps to obtain a Au square and a Ti circle on the surface of a semicond uctor wafer. Draw the shape of the mask to be used. At each appropriate step, indicate whether you use the direct patterning or the lift-off technique, you use positive or negative resist.

Reference no: EM131216636

Questions Cloud

Fill out tax form 1065 and k 1 : Fill out Tax Form 1065 & K-1. - Prepare a tax return for your new tax client - Phoenix Medical, LLC.- Fill out pages 1 through 5 of Form 1065 - US Return of Partnership Income.

What was the major issue addressed by the supreme court : Who won in the trial court? On what contract theory? What "elements" are required? Who appealed the trial court's decision? Why? What was the major issue addressed by the Supreme Court?

Determine the cost of supplies : Question - Determined that the cost of supplies on hand was Tk. 1500 and Tk. 1200 of supplies had been used during the month

Discuss competitive and various human resource strategies : Discuss the competitive and the various Human Resource strategies that are pre-requisites for the achievement of a strategic fit

Design a photolithography and metallization sequence : Design a photolithography and metallization sequence of steps to obtain a Au square and a Ti circle on the surface of a semicond uctor wafer. Draw the shape of the mask to be used. At each appropriate step, indicate whether you use the dire..

Is the bank liable for the janitor''s negligence : Additionally, note that under the doctrine of respondeat superior the bank WILL be liable for any potential negligence of the janitor employee? What defenses will the bank assert? Assume that the jurisdiction does not recognize assumption of risk ..

Calculate the angle of the si02 sidewalls : Poly-Si of the following structure is to be etched using a completely anisotropic dry-etch process, to remove poly-Si at a rate of 0.1 µm /min. However, this etch process has poor selectivities: selectivity to Si02 is 5, selectivity to photoresist..

What future changes are predicted for the field : In what ways has forensic science grown as a discipline? What future changes are predicted for the field? What current educational and training models are available for students interested in working in the field?

Explain how she can find the common difference for sequence : Explain how she can find the common difference for the sequence. Then use the common difference to find the second term of the sequence.

User Account

All Pages