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Modern Photonics
Picture below shows a double heterojunction laser designed for emission at 1.5 mm wavelength, which we have discussed in detail in class.
Problem 1.Design a double heterojunction laser on a GaAs substrate for emission near 830 nm wavelength using active layer thickness of 0.2 mm. Provide the following:The dimensions (which can be similar to Fig. 1, but need to be justified)The layer structure, meaningYou will need AlxGa1--xAs for carrier confinement and guiding layers. What mole fraction, x, do you choose and why?What will be the thickness of these layers. (You should choose the thickness that confines light in this waveguide)What will be the approximate doping concentration of the n+ and p+ layers?
Problem 2.Calculate/estimate the threshold current of the laser you have designed. Assume: length l= 400 mm; Reflectivities R1 = R2 =0.9; Cavity Loss g = 103 cm--1, internal quantum efficiency hi=0.9, and light confinement factor G=0.9.
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