Design a circuit using pspice to bias an mosfet transistor

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Reference no: EM131225157

Electrical Engineering PSPICE Design

DESIGN a circuit using PSPICE, to bias an MbreakN3 MOSFET transistor from the BREAKOUT library at a drain current of 1mA. Use a single supply voltage of 20V and compare all the calculated voltages and currents to the values obtained from a PSPICE simulation. Next sweep the supply voltage in 1V increments from 10V to 20V and compare the simulated drain currents to their calculated values. **For the MOSFET edit the model and use VTO=1, W=1E-6, L=2E-7, CGDO=2E-6, CGSO=5E-6, LAMBDA=0.02 and KP=0.5mA/V2.**

Reference no: EM131225157

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