Define which have different bandgaps and work functions

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Reference no: EM13255385

1) If you want to increase the space charge width on the n side of a p,n junction do you add or remove donors on that side?

2) When a forward bias is applied across a junction is the increased current flow due to movement of the Fermi level closer to the band edge or to lowering of the potential barrier?

3) True or false: The total current is constant with position across the junction region because the individual electron and hole contributions to the total are also constant.

4) Can a junction be formed between two materials which are both n-type but which have different bandgaps and work functions?

5) In determining the dark IV characteristics of a Schottky junction with an n-type semiconductor are the transport properties of holes important?

Reference no: EM13255385

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