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Define the term pulse reflection technique.
Show the diagram of it.
Label it clearly.
Design a state variable two-pole band-pass filter with a geometric center frequency of 2KHz and a 3dB bandwidth of 20 Hz and the tuning resistances need to be 10Kohms each.
Phase current - Neutral Grounded Assume that the load is star connected with the neutral grounded. Each phase has a series RL load with R = 5 ohms and L = 20 mH. Calculate and plot the Phase a current Ia using Fourier techniques.
A high-pass filter with C=30pF. R= 40 kohm A) What is the cutoff frequency The output of this filter is connected to an amplifier with an input resistance of 60 kohm. B) Sketch and label the new circuit. C) What is the new cutoff frequency
To analyze electric circuits, it is often necessary to solve simultaneous equations. To find the voltages Va, Vb, and Vc at nodes a, b, and c, the equations are 2(Va-Vb) + 5(Va-Vc) - e^(-t) =0 2(Vb-Vc) + 2Vb + 3(Vb-Vc) =0
implement the following boolean function F, using two-level forms (a)NAND-AND, (b)AND-NOR,(c)OR-NAND,and(d)NOR-OR: F(A,B,C,D) = Σ(0,1,2,3,4,8,9,12)
An array antenna is made of six iden tical elements, each a half-wavelength dipole, and is fed with identical currents, all in phase. Spacing of the elements is one-half wavelength. Assume the antennas are placed on the x axis, and are parallel t..
Lets assume that one electron is removed from each atom and these electrons are all removed from the penny to a distance such that the force of attraction between the positively charged penny and the removed group of electrons is 2.3 N.
Know the materials needed for electrostatic sprayer
What is the rate at which the electric field between the plates is changing?
Assume that the generator field current is adjusted to supply 480 V under rated conditions. What is the static stability limit of this generator? (Note: You may ignore RA to make this calculation easier.) How close is the full-load condition ..
Design an experiment to compare analytically estimated wear rates with the experimental wear rates.
Physically describe the behavior of the charge carriers and ionized dopant atoms in the vicinity of a semiconductor pn junction that causes the potential (energy) barrier that tends to prevent charge carriers from crossing the junction
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