Dclcnninc the al fraction with the rh eed system

Reference no: EM131011351

In MBE, the deposi tion of Al,Ga 1 ,As is performed by openmg simulta neously the Ga, Al and As shutters.

(a) Since, in normal growth conditions, the incorporation of Al and Ga atoms is unity, find an expression for the Al composition as a function of the growth rate of GaAs, AlAs, and AlGaAs.

(b) How would you dclcnninc the Al fraction with the RH EED system?

Reference no: EM131011351

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