Reference no: EM131077750

CASE STUDY

This assignment consists of a written report of approximately 1000 words and any diagrams in which you are asked to critically compare different process methods used to achieve the same result and show an awareness of current developments in semiconductor fabrication. QUESTION. In the production of a CMOS gate the required doping may be achieved by thermal diffusion or by ion implantation. Briefly describe each process and the relative advantages of each. Identify which process is used in the various doping stages in the production of a CMOS gate. Explain the effect upon doping methods as feature sizes in modern devices fall to well below the sub- micron feature size.