Create the layout design for mos nand3 gate using depletion

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Reference no: EM13261953

Create the layout design for MOS NAND3 gate using a depletion-type transistor with VTL = -0.3V and enhancement-type transistors with VTO = 0.5V such that VOL is less than or equal to 0.1V. VDD = 2.5V , tox = 10nm and 2X = 0.6μm .

Reference no: EM13261953

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