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Write a program to count the number of elements in an array that are smaller than 16. The array is stored at memory locations starting from $1010. The array has 30 8-bit unsigned elements. Store the count in the memory location $C001.
A 150 MVA, 24 kV, 123% three-phase synchronous generator supplies a large network. The network voltage is 27 kV. The generator operates with an induced voltage, which is twice the rated line-to-neutral voltage.
A 50-W lossless line has a length of 0.4. The operating frequency is 300 MHz. A load ZL = 40 + j30 ohm is connected at z = 0, and the Thevenin-equivalent source at z = -l is 12
Find the maximum allowed developed torque and corresponding motor speed that will ensure that no more than 25% of the power is lost in conductive losses in the armature and field windings.
Determine the initial x(0+) and final value x(infinity), given the following Laplace transforms X(s): X(s) = 2s2 + 5/s3 + 3s + 1
Voltage regulator utilizes a 500 mW Zener diode with Vz=6.7V at 20mA, rz=lOohm and IzK=5mA. The supply voltage y+ has a nominal value of 12V but can vary by ± 1 V. The load resistor is fixed at 330ohm
Suppose a turbine is used for generating electricity, estimate the ratio of powers generated by the same speed water and air. (Water density=1g/cm3, air density =1.2kg/m3)
The location of the zeroes in the spectrum suddenly changes to 5 kHz, 10 kHz, 15 kHz.... What parameter of the rectangular pulses has changed and what is its new value?
A voltage source V = 119
Determine the ROM size and contents to implement a function which converts a sign and magnitude number from -5 to +6 to two's complement format.
Discuss the sequence of actions that occur in the operation of the control system for a traffic light, that includes sensors in the roadbed. Indicate which actions are time-driven and which actions are event-driven
Create the layout design for MOS inverter using a depletion-type transistor with VTL = -0.3V and an enhancement-type device with VTO = 0.5V such that tPLH is less than or equal to 15ns and tPHL is less than or equal to 1ns with CL = 1pF.
Write an equation to help determine P-type body doping concentration Na for a required threshold voltage V (sub TN) for an N-channel Al-Sio(sub 2) -Si MOSFET. Use the equation to design an N-MOSFET with a thershold voltage of 10V
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