Construct the equilibrium energy band diagram

Reference no: EM131321121

Polycrystalline silicon has been used as the gate material in Si MOS transistors. It is also used as a barrier layer for making contact to thin Si layers to prevent a metal conductor from penetrating and short-circuiting the thin Si layer. But in MOS, poly-Si gate also gives one more parameter to control the threshold voltage (see next problem).

Thus, construct the equilibrium energy band diagram of a polycrystalline silicon gate MOSC on n-type Si at V_G = 0. Do this for four cases.

(a) The Si-gate is doped to the same donor concentration at the n-type Si bulk.

(b) The Si-gate is so heavily doped that its Fermi level is at E_C.

(d) The Si-gate is doped to degenerate p-type with E_F = E_v.

Reference no: EM131321121

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