Construct a unified physical explanation of all phenomena

Reference no: EM131793933

An engineer investigating solid-phase epitaxial regrowth after amorphizing ion implants of various species (P, B, Si, Ge,As, Sb) makes the following observations:

1. N-type dopants of very different size or atomic radius (e.g., antimony versus phosphorus) show identical regrowth rates, approximately an order of magnitude faster than the regrowth of silicon implanted and amorphized with silicon ions

2. P-type and N-type ion implanted regions have much faster regrowth rates than Si or Ge implanted regions, although they are not identical

3. B-doped regions compensated with an equal dose of an arsenic implant show identical regrowth rates to Ge implanted and amorphized regions.

Construct a unified physical explanation of all three phenomena, considering possibilities such as size or stress effects, dopant charge or electric field effects, or point-defect-based effects (no calculation required).

Reference no: EM131793933

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