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1) Compute i2(t) through resist R, Find value of w0 for which the amplitude of the current |I2| is maximum, compute I2 for w=w0. Does I2 depend on R? is there a contradiction with ohm's law?
2) For w=w0, compute the ratio of the amplitude of the voltage source over the amplitude of the voltage across the resistor,
Q=|U|/V0, when V0=sqrt(2), C=8.2microF, L=7mH, and R=1.5kOhms. Is this ratio larger or smaller than one? Explain the apparent contradiction
A function must be defined or declared above the locations in the source code file from where it is called. We declare a function by writing a function declaration (which is a statement so it ends with a semicolon).
draw the sympol and truth table of the gate that corresponds to the action of the logic gate.
Write a program to do the following: Declare a 4x4 2D integer array, Initialize the contents of the array to random numbers using rand() , Print the contents of the array, Prompt the user to enter a number to search for inside the array
Consider an AlGaAs based heterostructure laser diode which has an optical cavity of length 200 microns. The peak radiation is at 870 nm and the refractive index of GaAs is about 3.7. What is the mode integer m of the peak radiation
Consider a regenerative Rankine cycle with a 600C and 4-MPa throttle, a 5-kPa condenser, and an open feedwater heater at 500 kPa. Turbine efficiencies are 85%. (a) Draw labeled, coordinated T-s and flow diagrams.
Tune PI Parameters, Question: Given are the facts that Gc and Gp(s) are in series and Gp(s) = (K * Km) / [s[(Ls+R)(Js+b) + K^2m)]].
An nMOSFET and pMOSFET are fabricated with substrate doping concentration of 6x1017/cm3. The gate oxide thickness is 5 nm. (a) Find Vt of the nMOSFET when n+ poly-Si is used to fabricate the gate electrode.
The DC shunt motor is running at full load with a supply voltage of 440 V and a supply current of 70 A. The rotation speed in full load is 1000 rpm, the field resistance is 200 Ohm and the armature resistance is 0.2 Ohm.
draw out a schematic that implements a 3-bit XOR gate, but consisting of only 2-bit NAND gates. Your schematic should have from 8-10 NAND gates, but NO other logic function such as OR, AND, INV gates can be in your final design.
design a logic program that will track the activity for one turnstile. there will be three inputs PHASEA, B and RESET. there will be no output. the program should be able to track 999 total guests.
Define X and Y to be two discrete random variables whose joint probability mass function is given as follows: P(X = m, Y = n) = e^7*4^m*3^n?m / m!(n m)! , for m = 0, 1, . . . , n and n = 0, 1, 2, . . . , while P(X = m, Y = n) = 0
find the shortest length L of the line open-circuited at its load end so that the input impedance of the line at frequency f = 5GHz is the same as the impedance of a capacitor of capacitance C=10pf of the same frequency.
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