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An investor wishes to install a wind farm in the Snoqualmie pass area located in Washington State, United States. The pass is about 920m above the sea level. The average low temperature of the air is -4°C, and the average high is 18°C. Compute the power density of the wind in winter and summer assuming that the average wind speed is 15m/s.
A 100 Watt heater is used to melt 2 kg of solid ice at -10oC to liquid at +5oC at a constant pressure of 150 kPa. a) Find the change in the total volume of the water.
given the equation: τ=(t2-t1)/ln(v1/v2) and need to derive this equation: v(t)=(const)(e-t/τ) in order to do so. How to derive the second equation properly to get the first equation
A dc motor is driving a constant-torque load. If the armature voltage of the motor increases by 20%, calculate the percentage change in no load speed.
implementation of the projectin this project we are implementing the analog and digital modulation techniques.analog
A 200 nm oxide film is deposited on a 500 m thick bare silicon wafer that has a radius of curvature of 300 m. After deposition, the radius is measured to be 200 m. A 600 nm nitride film is now deposited on the oxide
the runner-up in a road race is given a reward that depends on the difference between his time and the winners time. he
Give a narritve for a cruise control system of a car. Include all relevant inputs and outputs. Design a flowchart and ladder diagram. Every element on the ladder diagram must be labelled and described.
a conducting rod having a mass density 2 kgm is suspended by two flexible wires in a uniform magnetic field which
A sequential circuit has one flip-flop, two inputs X and Y, and one output S. The circuit consists of a D flip-flop with S as its output and the logic implementing the function X xor Y xor S as the input to the flip-flop.
in december 2007 what at the time was the largest in north america a solar voltaic power plant was activated at nellis
explain why the circuit does not operate as a rectifier.
Calculate the FLAT BAND POTENTIAL and the THRESHOLD VOLTAGE for a real n+ polysilicon / p- silicon MOS diode having Na= 1017 cm^-3 and oxide thickness d = 5 nm. Assume that the oxide has only fixed oxide charges (Qf)
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