Reference no: EM131936299
Title : Role of Carbon, Magnesium, Iron, and Beryllium point defect on the breakdown voltage of Gallium Nitride (GaN) for High-power electronic photoconduction solid state switch applications.
Requirement ( 2 page single space, fill out all the list 1-4 bellow, main important properties that I COCERN about and will be study are optical absorption, thermal excitation, and breakdown voltage)
1. Background and problem statement associated with the topic
2. Purpose, goal and rationales for the dissertation research
3. Hypotheses and questions to be addressed in this research
4. Methods (list of method will be used in this work) provide description for all these method
• The simulations will be performed using the first-principle density function theory (DFT) as implemented within Vienna ab initio simulation package (VASP) used to relax the system
• the Orthogonal linear combination of atomic orbital known as (OLCAO) package used to compute optical properties like band gap, density of state and optical absorption,
• Quantum espresso method use to compute electron-phonon calculation especial band structure
• full-band Monte Carlo Simulation to compute breakdown voltage from band structure.
• XANES/ELNES analysis and measurement to locate the doped element and defect location.
Reference:add reference as needed.
1. S. Yoshida: Journal of The Japan Society of Applied Physics, 68, (1999), 787. (in Japanese)
2. E. O. Johnson: RCA Rev. 26, (1965) 163.
3. R. W. Keys: Proc. IEEE, 60, (1972) 225.