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One integrated circuit design calls for diffusing boron into very high purity silicon at an elevated temperature. It is necessary that at a distance 0.2 ?m from the surface of the silicon wafer, the room-temperature electrical conductivity be 1.2 x 103 (ohm-m)-1. The concentration of B at the surface of the Si is maintained at a constant level of 1.0 x 1025 m-3; furthermore, it is assumed that the concentration of B in the original Si material is negligible, and that at room temperature the boron atoms are saturated. Specify the temperature at which this diffusion heat treatment is to take place if the treatment time is to be one hour. The diffusion coefficient for the diffusion of B in Si is a function of temperature as
what is the magnitude and direction of the current flowing through the cross section?
Discuss why phasor analysis can only be performed on single-frequency circuits. For multiple frequencies what type of analysis must be performed
Each of three coins has two sides, heads and tails. Represent the heads or tails status of each coin by a logical variable (A for the first coin, B for the second coin, and C for the third) where the logical variable is 1 for heads and 0 for tails..
a 4A current source is in parallel with a 30 ohme resistance, a 15 ohme resistance, and an unknown resistance, Rx. The current through the unknown resistance is 1A. Determine the value of Rx.
A resistive temperature sensor is modeled as R(T) = 100 +0.0039(T-25)+1.0x10^-5(T-25)^2 where T is in degrees C. Calculate the tempco and sensitivity at T = 50 degrees C.
What is the common-mode rejection ratio (in dB) if the output voltage is measured to be 2.0 Vp-p when the input terminals are connected together and a 0.1 Vp-p voltage is applied between the inputs and ground.
you want to put in marble counter tops, but you dont want them to take up more than 1/20 of the space in you kitchen. what is the largest area the counters can take up?
At oneparticular quiescent operating point, a BJT produces a 300 mAchange in collector current for a 0.1 volt change in thebase-emitter voltage. What is gm for thistransistor in millisiemens
When electros and holes are present in a semi-conductor, the presence of an electric field produced by an external voltage will cause this carries,which have changes of oposite sign, to move in opposite directions.
1- Describe how the MOSFET acts as a switch. What could bedone to make the MOSFET ON when the square wave is negative and OFF when the square is positive 2- How is the magnitude of the control voltage determined
A certain circuit is constructed with four elements inparallel: a 4 ohm resistor, a 10 ohms resistor, 1 uF capacitator,and a 2mH inductor. (a) compute α. (b) compute ω0 (c) is the circuit underdamped, critically damped oroverdamped Explain
Explain why an instrumentation amplifier has more than one stage? How would you increase the output current of an op-amp?
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