Change in emission wavelength in the quantum well structure

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Reference no: EM13538250

A GaAs quantum well structure is given where a thin GaAs layer is embedded between AlGaAs layers. Assuming the we can treat the electrons in the GaAs conduction band as being trapped in a 1-D potential well in the x direction,

(a) What is the form of the density of states in this in the x-direction?

(b) If we have a quantum well structure as depicted below, what would be the first two energy levels for a quantum well of thickness of 10 nm? The electron mass is

me = 0.07 mo .

(c) What is the hole energy below EV of the sample is mh = 0.5 mo ?

(d) What would be the change in emission wavelength in the quantum well structure from bulk GaAs (1.42 eV)?

Reference no: EM13538250

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