Caltulate the built in voltage vbi at a room temperture

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the N-type P-type doping levels of a silicon p-n junction are nd=na= 5x10^16 cm^-3 caltulate the built in voltage Vbi a) at a room temperture b) at 300c c) at 700 c (ni= 1.10x1018 cm^-3) does a negative value for Vbi mean anything ?

Reference no: EM13230864

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