Calculate the minority-carrier hole concentration at edge

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Reference no: EM13231024

Consider a Si p-n junction with n-type doping concentration of 10^16 cm^-3. This junction is forward bias with V=0.8 V at 300 °K. Calculate the minority-carrier hole concentration at the edge of the space charge region.

Reference no: EM13231024

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Calculate the minority-carrier hole concentration at edge : Consider a Si p-n junction with n-type doping concentration of 10^16 cm^-3. This junction is forward bias with V=0.8 V at 300 °K. Calculate the minority-carrier hole concentration at the edge of the space charge region.

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