Calculate the enhancement in the phosphorus diffusion

Reference no: EM131793910

A phosphorus implant is performed into a bare p-type silicon wafer with a back-ground doping of 1 x 10¹⁵ cm^-3, at an energy of 50 keV, and a dose of 1 x 10¹² cm^-2. After an anneal at 903°C for 10 min, the junction depth is measured to be 0.25 µm.

Calculate the enhancement in the phosphorus diffusion coefficient that was caused by the implantation damage.

Reference no: EM131793910

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