Calculate the diode capacitances at a biases of 0v

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Reference no: EM13292001

A silicon diode with an area of 100mm´100mm is doped withND=2e17cm-3 and NA=1e20cm-3. It has an IS=1fA, nonidealityfactor n=1 and tT=1ns. Consider room temperature of 300 Degree Kelvin. In the calculation below, you should find physicalconstants that might be needed such as q (electron charge), eSi(silicon permittivity), k (Boltzmann's constant) yourself. Indicateyour data source.

a), calculate the build-in potential (φj) of the diode
b), calculate the diode capacitances at a biases of 0V, -10V and+0.7V, respectively .

Reference no: EM13292001

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