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(a) Calculate the conductivity of a piece of intrinsic silicon at 300 K, if it has an intrinsic carrier density of 1.60 x 1016 m-3. Take into account conduction by both electrons and holes.
(b) What would be the conductivity of a piece of extrinsic silicon at 300 K which has been doped p-type with a number density of acceptors equal to 6.30X10^21 m -3 , assuming it has an intrinsic carrier density of 1.60 X 1016 m-3?
(c) Suppose a current of 50.0 mA is passed through a piece of the silicon in (b). How much of this current is carried by the electrons, and how much by the holes?
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In this problem, the aim was to calculate the conductivity of intrinsic and extrinsic Si- based semiconductor. The extrinsic semiconductor was doped with p-type element. In intrinsic conductor the contribution to the total conductivity is due to the combination of electron and holes carriers which are in equal number. In the case of extrinsic conductor the charge carrier of holes is exceeded by 103 factor which literally dominated the total conductivity. In the third problem we arrived at a solution for percentage of current due to holes and electrons in Si- based intrinsic semiconductor when it is connected to external power supply.
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