Calculate the built-in electric field of silicon sample

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The donor distribution of a nonuniformly doped silicon sample can be approximated by N(x) = Noexp(-x/x0), where x0 = 1 µm. As no current flows under the open-circuit condition, a built-in electric field is established so that the drift current exactly compensates the diffusion current. Calculate the built-in electric field.

Reference no: EM13281515

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