Calculate the angle of the si02 sidewalls

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Reference no: EM131216634

Discuss the major advanlagcs and disadvanlagcs of ckclron beam lithography.

Poly-Si of the following structure is to be etched using a completely anisotropic dry-etch process, to remove poly-Si at a rate of 0.1 µm /min. However, this etch process has poor selectivities: selectivity to Si02 is 5, selectivity to photoresist is 2.

(a) Sketch the cross-section after 5 minutes of etching.

(b) Calculate the angle of the Si02 sidewalls after 5 minutes of etching.

Reference no: EM131216634

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