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if a 1mA movement has an internal resistance of 43 ohms, calculate the shunt resistance required to increase its range to 50mA and also 300mA.
A three-phase wye-delta transformer is rated 225-kV:24-kV, 400 MVA and has a single-phase equivalent series reactance of 6.08 ohms as referred to its high-voltage terminals. The transformer is supplying a load of 375 MVA
the energy stored in a 4H inductor is 150J and is increasing at 200J/s at t=4s 1. determine the current magnitude at t=4s 2. determine the current voltage at t=4s 3. does the current enter or leave the positive terminal of the inductor
Telephone channels and PCM analysis, The analog to digital converter (ADC) used in a telephone system outputs 8 bit words. The digital words are transmitted as a serial stream to form a PCM voice signal
Find the final yield for a nine-mask-level process in which the average fatal defect density per cm2 is 0.1 for four levels, 0.25 for four levels, and 1.0 for one level. The chip area is 50 mm2.
A terrestrial radio link transmits a CDMA signal from a base station using a spreading code with a chip rate of 1.0 Mchips per seconds. The message data rate of the signal is 10 kbps.
Write a balance reaction equation for the complete combution of carbon in air. What are the mass and mole fraction of fuel, air oxygen and notrogen in the reactants
A mote draws an average of 200mA when "awake", 0.1mA when "sleeping", and 400mA (total) when "transmitting". Transmitting data takes 2ms, and sensor acquisition takes 1ms. If the maximum size battery available is 5000mAh
Explain in detail on the fabrication process of the FINFET. You must show a 3-dimensional view of FINFET and label the its L and W, the length and width of the gate.
We would like to monitor the first two least significant bits of PORTB (use masking technique). Whenever both of these bits are set, switch all LEDs of Port A on for one second. Assume that the name of the delay subroutine is DELAY.
For the system represented by the following difference equation y[n] = 0.5x[n] + 0.5x[n - 1] find: (a) the transfer function H(z) of the system. (b) the frequency response H(e^jw) of the system.
Calculate the energy required to change the arrival time of a near earth object of mass 10,000 MT by a distance equal to the diameter of Earth using laser ablation. Assume an ejection velocity of the material at 10,000 m/sec.
A Si p-n-p transistor has impurity concentrations of 5´1018, 2´1017, and 1016 cm-3 in the emitter, base, and collector, respectively. The base width is 1.0mm, and the device cross-sectional area is 0.2 mm2.
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